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FUJITSU and Transphorm have started mass producing Gallium Nitride power devices for switching applications.
The mass production will take place at Fujitsu Semiconductor’s CMOS-compatible 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan.
Transphorm has established the industry’s first and only qualified 600V GaN device platform, backed by its GaN power IP portfolio. The world’s first photovoltaic power conditioner products using the GaN module from Transphorm was launched in January, 2015, although GaN technology can also be applied to ultra-small AC adapters, high density power supplies for PCs, servers and telecom equipment, highly efficient motion control systems, etc.
The stepped-up production will dramatically expand the companies’ GaN power device businesses, and help satisfy the increasing market demands for GaN devices, enabling the next wave of compact, energy-efficient power conversion systems.
In 2013, the two companies decided to integrate their GaN power device businesses. This led to the combination of the processes and technology, with the results being ported to the Aizu fab, with key improvements that allow high-volume, silicon-compatible device manufacturing.