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NEXT-generation power semiconductors will see explosive growth, claims the Information Network.
With traditional silicon-based power semiconductors reaching their theoretical limitations, the stage is set for wide-bandgap power semiconductor devices made from silicon carbide and gallium nitride to stake their claims.
“The commercial battle for next-generation power semiconductors is evolving. As a result, many semiconductor manufacturers are attempting to enter the market,” said Dr. Robert Castellano, president of The Information Network.
“Already it’s a $150 million market, although small compared to the $14 billion silicon-based power semiconductor market.”
Insulated-gate bipolar transistor (IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) will be the main growth drivers for these next-generation power semiconductors.
Both silicon carbide and gallium nitride based semiconductors have been under intense R&D for some time, although research into silicon carbide has been ongoing since the early 1990s and so that material is most mature and reliable.
The Information Network projects the next-generation power semiconductor market will have a compound annual growth rate of 63% between 2011 and 2017, reaching values of more than US$500m.
Benefiting from the growth of these wide-bandgap devices will be processing equipment. Significant improvements on the technique of growing GaN material on Si substrates have enabled high quality, crack-free GaN epi layers grown on Si, overcoming the 17% crystal mismatch between the two materials crystal faces.
Silicon MOSFETs use wirebonding and traditional SO or TO packages. GaN on Silicon can be bonded using flip chip, so the flip chip industry can also expect to benefit as these next-generation power semiconductors come into their own.