Toshiba America Electronic Components has added a 512Gb, 64-layer device with three-bit-per-cell triple-level cell (TLC) technology to its BiCS Flash product line.
This technology will enable a 1TBchip solution. BiCS Flash is a 3D flash memory stacked cell structure and is suitable for applications that require high capacity and performance, such as enterprise and consumer solid-state drives, including Toshiba’s own SSD portfolio.
Sample shipments of the 512Gb devices have begun, with mass production scheduled for the second half of 2017.
The next milestone on Toshiba’s BiCS Flash development roadmap will feature the industry’s largest capacity, a 1TB product with a 16-die stacked architecture, in a single package. Plans call for sample shipments to commence in April of this year.
The BiCS Flash device is based on the company’s, third generation, 64-layer stacking process that realizes a 65 percent larger capacity per unit chip size than the company’s 48-layer, 256Gb device. This increases memory capacity per silicon wafer and leads to a reduction of cost-per-bit.
The BiCS FLASH lineup also includes a 64-layer 256Gb offering, which is currently in mass production.
In support of this commitment, Toshiba recently announced that construction has begun on a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new memory-focused R&D Center, at Yokkaichi Operations in Mie Prefecture, Japan.